features 10 ka, 8/20 ? surge capability low clamping voltage under surge bidirectional tvs surface mount package excellent performance over temperature applications high power dc bus protection absolute maximum ratings (@ t a = 25 ? unless otherwise noted) ptvs10-xxxc-sh series high current tvs diodes *rohs directive 2002/95/ec jan. 27, 2003 including annex and rohs recast 2011/65/eu june 8, 2011. speci cations are subject to change without notice. the device characteristics and parameters in this data sheet can and do vary in different applications and actual device perfor mance may vary over time. users should verify actual device performance in their speci c applications. rating symbol value unit repetitive standoff voltage PTVS10-058C-SH ptvs10-076c-sh v wm 58 76 v peak current rating per 8/20 s iec 61000-4-5 i ppm 10 ka operating junction temperature range t j -55 to +125 c storage temperature range t s -55 to +150 c general information the ptvs10-xxxc-sh range of high current bidirectional tvs diodes is designed for use in high power dc bus clamping applications. these devices offer bidirectional port protection and are available with standoff voltage ratings of 58 v and 76 v. the devices are rohs* compliant. they also meet iec 61000-4-5 8/20 s current surge requirements. *rohs compliant electrical characteristics (@ t a = 25 ? unless otherwise noted) parameter test conditions min. typ. max. unit i d standby current v d = v wm 10 a v (br) breakdown voltage i br = 10 ma PTVS10-058C-SH ptvs10-076c-sh 64 85 67 90 70 95 v v c clamping voltage (1) i pp = 10 ka PTVS10-058C-SH ptvs10-076c-sh 110 140 v v (br) temperature coef? cient 0.1 %/c c capacitance f = 10 khz, v d = 1 vrms PTVS10-058C-SH ptvs10-076c-sh 8 6 nf asia-paci c: tel: +886-2 2562-4117 ?fax: +886-2 2562-4116 emea: tel: +36 88 520 390 ?fax: +36 88 520 211 the americas: tel: +1-951 781-5500 ?fax: +1-951 781-5700 www.bourns.com (1) v c measured at the time which is coincident with the peak surge current.
speci cations are subject to change without notice. the device characteristics and parameters in this data sheet can and do vary in different applications and actual device perfor mance may vary over time. users should verify actual device performance in their speci c applications. 3312 - 2 mm smd trimming potentiometer product dimensions ptvs10-xxxc-sh series high current tvs diodes dimensions: mm (inches) this is a pb free product, with epoxy encapsulations meeting ul class 94v-0. ag plated leads meet solderability requirements of jesd22-b102. package dimensions are shown below. how to order ptvs 10 - xxx c - s h series ptvs = power tvs high current diode peak current rating 10 = 10 ka repetitive standoff voltage 058 = 58 v 076 = 76 v suf x c = bidirectional device package s = surface mount temperature h = high temperature series application a typical application for power tvs products includes dc power line protection. exposed dc power interface + - recommended printed wiring land pattern dimensions typical part marking PTVS10-058C-SH ............................ 10058 ptvs10-076c-sh ............................ 10076 device dimension d PTVS10-058C-SH 11.00 max. (0.433) ptvs10-076c-sh 12.00 max. (0.472) 14.00 (.551) max. d 2.00 (.079) min. 2.00 (.079) min. 14.50 (.571) max. 18.60 0.50 (.733 .020) 2.80 0.20 (.110 .0008) 0.50 0.05 (.020 .002) 10.00 0.20 (.394 .008) 11.00 (.433) 12.60 (.496) 3.5 (.138)
speci cations are subject to change without notice. the device characteristics and parameters in this data sheet can and do vary in different applications and actual device perfor mance may vary over time. users should verify actual device performance in their speci c applications. 3312 - 2 mm smd trimming potentiometer ptvs10-xxxc-sh series high current tvs diodes performance graphs v-i characteristic typical v br vs. junction temperature typical surge current derating current 8/20 s waveform per iec 61000-4-5 rev. 11/15 this graph shows the typical device surge current derating versus ambient temperature when subjected to the 8/20 ? current waveform per the iec 61000-4-5 speci cation. this device is not intended for continuous operation at temperatures above 125 ?. 120 0 0 25 50 100 75 125 150 175 ambient temperature (c) percent of rated value 110 100 90 80 70 60 50 40 30 20 10 20 40 60 80 100 120 0 030 25 20 15 10 5 i pp ? peak pulse current (% of i pp ) t ? time (s) test waveform parameters t t = 8 s t d = 20 s t t e t t d = t | i pp /2 percent of v br change 16 6 8 10 12 14 0 2 4 -4 -6 -8 -40 -20 0 20 40 60 80 100 120 140 160 junction temperature (t j ) - c 25 c
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